RT9607

Product Summary

The RT9607 is a dual power channel MOSFET driver specifically designed to drive four power N-MOSFETs in a synchronous-rectified buck converter topology. These drivers combined with RichTek s series of Multi-Phase Buck PWM controllers provide a complete core voltage regulator solution for advanced microprocessors. The RT9607 can provide flexible gate driving for both high side and low side drivers. This gives more flexibility of MOSFET selection. The output drivers of the RT9607 are capble to driver a 3nF load in 30/40ns rising/falling time with fast propagation delay from input transition to the gate of the power MOSFET. This device implements bootstrapping on the upper gates with only a single external capacitor required for each power channel. This reduces implementation complexity and allows the use of higher performance, cost effective, N-MOSFETs. Adaptive shoot-through protect-ion is integrated to prevent both MOSFETs from conducting simultaneously.

Parametrics

RT9607 absolute maximum ratings: (1)Supply Voltage, VCC: 15V; (2)Supply Voltage, PVCC: VCC + 0.3V; (3)BOOT Voltage, VBOOT-VPHASE: 15V; (4)Input Voltage, VPWM: GND - 0.3V to 7V; (5)PHASE to GND DC: &#8722;5V to 15V, < 200ns: &#8722;10V to 30V; (6)BOOT to GND DC: &#8722;0.3V to VCC + 15V, < 200ns: &#8722;0.3V to 42V; (7)UGATE: VPHASE - 0.3V to VBOOT + 0.3V; (8)LGATE: GND - 0.3V to VPVCC + 0.3V, < 200ns: &#8722;2V to VCC + 0.3V; (9)Power Dissipation, PD @ TA = 25℃ VQFN&#8722;16L 3x3: 1.471W, SOP-14: 0.909W; (10)Storage Temperature Range: &#8722;40℃ to 150℃; (11)Lead Temperature (Soldering, 10 sec.): 260℃; (12)ESD Susceptibility: 2kV, MM (Machine Mode): 200V.

Features

RT9607 features: (1)Drives Four N-MOSFETs; (2)Adaptive Shoot-Through Protection; (3)Propagation Delay 40ns; (4)Support High Switching Frequency; (5)Fast Output Rise Time; (6)5V to 12V Gate-Drive Voltages for Optimal Efficiency; (7)Tri-State Input for Bridge Shutdown; (8)Supply Under-Voltage Protection; (9)RoHS Compliant and 100% Lead (Pb)-Free.

Diagrams