Product Summary
The 9916H is an Advanced Power MOSFET. It provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Parametrics
9916H absolute maximum ratings: (1)VDS Drain-Source Voltage: 18 V; (2)VGS Gate-Source Voltage: ±12 V; (3)ID@TC=25℃ Continuous Drain Current, VGS @ 4.5V: 35 A; (4)ID@TC=125℃ Continuous Drain Current, VGS @ 4.5V: 35 A; (5)IDM Pulsed Drain Current: 90 A; (6)PD@TC=25℃ Total Power Dissipation: 50 W; (7)Linear Derating Factor: 0.4 W/℃; (8)TSTG Storage Temperature Range: -55 to 150 ℃; (9)TJ Operating Junction Temperature Range: -55 to 150 ℃.
Features
9916H features: (1)Low on-resistance; (2)Capable of 2.5V gate drive; (3)Low drive current; (4)Single Drive Requirement.
Diagrams
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![]() 9916 004100 |
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